4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3

Svetlana Beljakowa; Thomas Frank; Gerhard Pensl; Kun Yuan Gao; Florian Speck; Thomas Seyller

doi:10.4028/www.scientific.net/MSF.556-557.627

Paper Titles

Selenium and Tellurium Double Donors in SiC
p.607

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
p.611

Dynamical Simulation of SiO₂/4H-SiC(0001) Interface Oxidation Process: from First-Principles
p.615

Trap Assisted Gas Sensing Mechanism in MISiC Capacitors
p.621

4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al₂O₃
p.627

A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
p.631

Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
p.635

Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
p.639

Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)
p.643

HomeMaterials Science ForumMaterials Science Forum Vols. 556-5574H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors...

4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al₂O₃

Abstract:

An alternative oxidation technique is developed and built up, which provides monatomic oxygen during the whole oxidation process. The set-up consists of a tungsten lamp furnace and a microwave-plasma. A number of different gases can be introduced into the oxidation quartz tube. In addition, an Al2O3-layer is deposited on a part of the oxide layers by atomic layer chemical vapor deposition (ALCVD). First oxidation runs result in encouraging low values of the density of interface states Dit and in the flatband voltage UFB. It turns out that with the present experimental conditions, the comparison of MOS capacitors fabricated with different dielectric layers favors gate dielectrics grown in O2/N2-ambient.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2006

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

627-630

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.627

Citation:

Cite this paper

Online since:

September 2007

Authors:

Svetlana Beljakowa, Thomas Frank, Gerhard Pensl, Kun Yuan Gao, Florian Speck, Thomas Seyller

Keywords:

Al₂O₃, Interface States (or Traps), Microwave Plasma-Assisted Oxidation, MOS Capacitor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] G. Pensl, M. Bassler, F. Ciobanu, V. Avanas'ev, H. Yano, T. Kimoto, H. Matsunami: Mat. Res. Soc. Symp. Proc. 640 (2001), p. H3. 2.

Google Scholar

[2] X. Wang, Z. J. Luo, T. P. Ma: IEEE Trans. on Electron. Dev. Vol. 47 (2000), p.458.

Google Scholar

[3] G. Y. Chung, J. R. Williams, K. McDonald, L. C. Feldman: J. Phys. Condens. Matter Vol. 16 (2004), p.1857.

Google Scholar

[4] K. Y. Gao, Th. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Tadlich, J. D. Riley, R. G. C. Leckey: Appl. Phys. Lett. Vol. 83 (2003), p.1830.

DOI: 10.1063/1.1609053

Google Scholar

[5] V. V. Afanas'ev, F. Ciobanu, G. Pensl, A. Stesmans in: Silicon Carbide - Recent Major Advances, edited by W. J. Choyke, H. Matsunami, G. Pensl, p.343, Springer (2004).

DOI: 10.1007/978-3-642-18870-1

Google Scholar

[6] V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, M. J. Schulz, C. I. Harris: Appl. Phys. Lett. Vol. 68 (1996), p.2141.

Google Scholar

[7] E. H. Nicollian, A. Goetzberger: Bell Systems Technol. J. 46 (1966), p.1055.

Google Scholar