Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Abstract:

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Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range of implantation dose, including a high dose able to amorphise a surface SiC layer with the intent to reduce the oxidation time. The oxide quality and the SiO2-SiC interface properties were characterized by capacitance-voltage measurements of the MOS capacitors. The proposed process, in which nitrogen is ion-implanted on SiC layer before a wet oxidation, is effective to reduce the density of interface states near the conduction band edge if a high concentration of nitrogen is introduced at the SiO2-SiC interface. We found that only the nitrogen implanted at the oxide-SiC interface reduces the interface states and we did not observe the generation of fixed positive charges in the oxide as a consequence of nitrogen implantation. Furthermore, the concentration of the slow traps evaluated from the Slow Trap Profiling technique was low and did not depend on the nitrogen implantation fluence.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

639-642

DOI:

10.4028/www.scientific.net/MSF.556-557.639

Citation:

A. Poggi et al., "Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose", Materials Science Forum, Vols. 556-557, pp. 639-642, 2007

Online since:

September 2007

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$35.00

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