Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application

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We investigated the growth, interface formation as well as the structural and electrical properties of crystalline gadolinium oxide (Gd2O3) directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. The Gd2O3 layers were found to grow epitaxially resulting in the formation of flat (111) oriented layers with the cubic bixbyite type of structure. X-ray photoelectron spectroscopy measurements reveal a silicate-like Gd2O3/SiC interface. Furthermore, conduction and valence band discontinuities at the Gd2O3/6H-SiC interface were estimated with 1.9 eV and 1.2 eV, respectively. The fabricated capacitors exhibit suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1V and breakdown fields > 4.3 MV/cm for layers with 14 nm thickness. The CV measurements exhibit only small negative flat band shifts and a very small hysteresis, resulting from fixed charges or interface trap levels in the range of 1x1012 cm-2. These properties make Gd2O3 suitable for high-k application also for SiC.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

655-658

Citation:

A. Fissel et al., "Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application", Materials Science Forum, Vols. 556-557, pp. 655-658, 2007

Online since:

September 2007

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$38.00

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