Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices

Abstract:

Article Preview

Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the retained BPDA/PPD polyimide (PI) intrinsic dielectric and conduction properties, as a first stage in the evaluation of its ability to be applied as a passivation material for high temperature operating silicon carbide power devices. The dielectric constant, dielectric loss factor, and the static leakage current of the “as-prepared” Al/PI/Al structures are strongly affected above 175°C, reaching critical values at 400°C with regard to the aimed application. However, an evolution of these characteristics after the sample exposure at high temperature is observed, resulting in a very good and stabilized electrical behavior even at 400°C.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

671-674

DOI:

10.4028/www.scientific.net/MSF.556-557.671

Citation:

S. Diaham et al., "Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices", Materials Science Forum, Vols. 556-557, pp. 671-674, 2007

Online since:

September 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.