Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices

Abstract:

Article Preview

Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the retained BPDA/PPD polyimide (PI) intrinsic dielectric and conduction properties, as a first stage in the evaluation of its ability to be applied as a passivation material for high temperature operating silicon carbide power devices. The dielectric constant, dielectric loss factor, and the static leakage current of the “as-prepared” Al/PI/Al structures are strongly affected above 175°C, reaching critical values at 400°C with regard to the aimed application. However, an evolution of these characteristics after the sample exposure at high temperature is observed, resulting in a very good and stabilized electrical behavior even at 400°C.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

671-674

Citation:

S. Diaham et al., "Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices", Materials Science Forum, Vols. 556-557, pp. 671-674, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] P. Friedrichs: High Temperature Electronic Conference Proc., Santa FE, New Mexico (2006), p.420.

[2] C.P. Wong: Polymers for electronic and photonic applications. London, Academic Press, Inc (1993).

[3] http: /www. hdmicrosystems. com.

[4] M. L Locatelli, K. Isoird, S. Dinculescu, V. Bley, and T. Lebey: Proceedings of the 10 th European Power Electronics Conference, Toulouse, France (2003), p.897.

[5] S. Diaham, M. L Locatelli, T. Lebey, S. Zelmat, and V. Bley: Proceedings of High Temperature Electronic Conference, Santa FE, New Mexico (2006), p.516.

[6] S. Diaham, M. L Locatelli, and T. Lebey: IEEE Conference Electrical Insulation and Dielectric Phenomena 2006, 15/18 oct. - Kansas City (MO, USA).

DOI: https://doi.org/10.1109/ceidp.2006.312070

[7] K. Iida, M. Waki, S. Nakamura, M. Ieda, and G. Sawa: Jpn. J. Appl. Phys., Vol. 23, No. 3, 1984, p.381.

[8] Y. Ito, M. Hikita, T. Kimura, and T. Mizutani: Jpn. J. Appl. Phys., Vol. 29, No. 6, 1990, p.1128.

[9] T. A. Ezquerra, F. J. Baltà-Calleja and H. G. Zachmann: Polymer, Vol. 35, No. 12, 1994, p.2600.