Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC

Abstract:

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Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm. At 250°C, oxides thermally-grown using N2O with NO annealing achieve a mean time to failure (MTTF) of 2300 hours at 6 MV/cm. Oxides grown in steam with NO annealing show approximately four times longer MTTF than N2O-grown oxides. At electric fields greater than 8 MV/cm, Fowler-Nordheim tunneling significantly reduces the expected failure times. For this reason, extrapolation of mean-time to failure at low fields must be performed by datapoints measured at lower electric fields.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

675-678

DOI:

10.4028/www.scientific.net/MSF.556-557.675

Citation:

K. Matocha and R. Beaupre, "Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 675-678, 2007

Online since:

September 2007

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$35.00

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