Paper Title:
Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
  Abstract

Gas phase etching of 4H SiC n+ substrates was performed utilizing chlorine containing etch chemistries in a hot wall CVD system. Carbon and silicon vapor were added to explore selective etching reactions on the wafer surface. The impact of the etch on the bare wafer surface as a function of temperature and etch chemistry is investigated. Selection of the etch chemistry and temperature are critical to ensure a smooth etched surface on which to begin epitaxial deposition. Etching also influences defect propagation from the substrate into the epitaxial layer. The results show etch chemistry reactions will influence the conversion of micropipes in the epi buffer layer.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
69-72
DOI
10.4028/www.scientific.net/MSF.556-557.69
Citation
M. F. MacMillan, M. J. Loboda, J. W. Wan, G. Chung, E.P. Carlson, M. J. Spaulding, D. Deese, "Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates", Materials Science Forum, Vols. 556-557, pp. 69-72, 2007
Online since
September 2007
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Price
$35.00
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Authors: Mike F. MacMillan, Mark J. Loboda, Gil Chung, E.P. Carlson, Jian Wei Wan
Abstract:Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and...
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