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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Electronic Structure of Graphite/6H-SiC Interfaces

Electronic Structure of Graphite/6H-SiC Interfaces

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Abstract:

We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of ÁSi b,n = 0.3±0.1 eV and ÁSi b,p = 2.7±0.1 eV, respectively. The observed barrier is face specific: on n-type 6H- SiC(0001) we find ÁC b,n = 1.3±0.1 eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.

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Silicon Carbide and Related Materials 2006

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

701-704

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.701

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Online since:

September 2007

Authors:

Thomas Seyller, Konstantin V. Emtsev, Florian Speck, Kun Yuan Gao, Lothar Ley

Keywords:

Band Bending, Contact, Graphite, Photoelectron Spectroscopy, Schottky Barrier

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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