Electronic Structure of Graphite/6H-SiC Interfaces

Abstract:

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We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of ÁSi b,n = 0.3±0.1 eV and ÁSi b,p = 2.7±0.1 eV, respectively. The observed barrier is face specific: on n-type 6H- SiC(0001) we find ÁC b,n = 1.3±0.1 eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

701-704

DOI:

10.4028/www.scientific.net/MSF.556-557.701

Citation:

T. Seyller et al., "Electronic Structure of Graphite/6H-SiC Interfaces", Materials Science Forum, Vols. 556-557, pp. 701-704, 2007

Online since:

September 2007

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Price:

$35.00

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