Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)
The specific contact resistance of Al, Ti and Ni ohmic contacts to N+ implanted 3C-SiC(100) has been investigated by means of TLM method. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 1.4×1015 cm-2 at room temperature and is subsequently annealed by RF annealer at a temperature of 1400 oC for 10 min in Ar gas flow, resulting in the sheet resistance of 130 0/sq. The deposited Al layer on the annealed sample shows the extremely low specific contact resistance of about 1×10-7 0cm2. The ohmic contacts of Ti and Ni also show the specific contact resistance of 5×10-6 and 2×10-5 0cm2, respectively. The obtained specific contact resistance is proportional to the Schottky barrier height of metal cotact to n-type 3C-SiC. The annealing of Ni ohmic contact above 600 oC results in the considerable reduction of specific contact resistance due to the silicidation of Ni.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Y. Suzuki et al., "Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)", Materials Science Forum, Vols. 556-557, pp. 705-708, 2007