Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)


Article Preview

The specific contact resistance of Al, Ti and Ni ohmic contacts to N+ implanted 3C-SiC(100) has been investigated by means of TLM method. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 1.4×1015 cm-2 at room temperature and is subsequently annealed by RF annealer at a temperature of 1400 oC for 10 min in Ar gas flow, resulting in the sheet resistance of 130 0/sq. The deposited Al layer on the annealed sample shows the extremely low specific contact resistance of about 1×10-7 0cm2. The ohmic contacts of Ti and Ni also show the specific contact resistance of 5×10-6 and 2×10-5 0cm2, respectively. The obtained specific contact resistance is proportional to the Schottky barrier height of metal cotact to n-type 3C-SiC. The annealing of Ni ohmic contact above 600 oC results in the considerable reduction of specific contact resistance due to the silicidation of Ni.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




Y. Suzuki et al., "Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)", Materials Science Forum, Vols. 556-557, pp. 705-708, 2007

Online since:

September 2007




[1] Papers in Proceedings of International conference on silicon carbide and related materials (2005).

[2] K. Semmelroth, M. Krieger, G. Pensl, H. Nagasawa, R. Puschl, M. Hundhausen, L. Ley, M. Nerding and H. P. Strunk : Mater. Sci. Forum Vols. 457-460 (2004), p.151.

DOI: 10.4028/www.scientific.net/msf.457-460.151

[3] M. Satoh and H. Matsuo: Proceeding of ICSCRM2005, p.923 (in press).

[4] Paper presented by E. Taguchi, Y. Suzuki and M. Satoh, in ECSCRM2006 (TuP 44).

[5] S.M. Sze: Physics of Semiconductor Devices, 2 nd edition (John Wiley & Sons, New York, 1981), p.255.

[6] J. Crofton, P.G. McMullin, J.R. Williams, M.J. Bozach, J. Appl. Phys. Vol. 77 (1995), p.1317.

[7] T. Nakamura and M. Satoh: Mat. Sci. Forum Vols. 389-393 (2002), p.889 Fig. 3: RBS spectra taken from Ni/3C-SiC(100).

Fetching data from Crossref.
This may take some time to load.