Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates
In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers, enlightening the interest of both material and Ni contacts for future devices fabrication.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
A. E. Bazin et al., "Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates", Materials Science Forum, Vols. 556-557, pp. 721-724, 2007