Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates


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In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers, enlightening the interest of both material and Ni contacts for future devices fabrication.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




A. E. Bazin et al., "Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates", Materials Science Forum, Vols. 556-557, pp. 721-724, 2007

Online since:

September 2007




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