Plasma Etching for Backside Wafer Thinning of SiC

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In this initial phase of work, two methods of backside wafer thinning using ICP plasma etching of two-inch SiC substrates have been considered. Plasma processes were optimized for nonbonded and bonded wafers. The non-bonded process was used to etch 250μm thick substrates to a final thickness of 100μm. The bonded process was used to etch glass bonded SiC substrates mechanically ground to 130μm thick and plasma etched to a final thickness of 100μm. Etch rate measurements and surface analysis were performed using a profilometer and white light interferometry. Etch rates of 3.4μm/min were achieved for the bonded process and 2.0μm/min for the non-bonded process. The surface morphology for the non-bonded process was three to four times lower than the bonded process. The part mechanically ground samples showed evidence of surface damage from the grinding process after plasma etching.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

729-732

Citation:

K. M. Robb "Plasma Etching for Backside Wafer Thinning of SiC", Materials Science Forum, Vols. 556-557, pp. 729-732, 2007

Online since:

September 2007

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$38.00

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DOI: https://doi.org/10.1557/proc-815-j5.19

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DOI: https://doi.org/10.1088/0953-8984/14/48/394

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