Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC
We have fabricated columnar nano-porous SiC by photo-electrochemical etching on the C-face of n-type 6H SiC at constant voltage. SEM images reveal that the pores are long, straight and parallel with diameters of about 20 nm. We have produced such layers up to 250 μm thick. The pore morphologies for both Si and C-face SiC samples are compared and discussed as a part of the effort to understand the growth mechanism. It is found that the constant voltage etching condition on C-face SiC is crucial for this nano-columnar pore formation.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Y. Ke et al., "Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC ", Materials Science Forum, Vols. 556-557, pp. 741-744, 2007