4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

Abstract:

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Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 μm and a gate width of 100 μm was 430 mA/mm, and the transconductance was 25 mS/mm. The maximum oscillation frequency and cut-off frequency were 26.4 GHz and 7.2 GHz, respectively. The power gain was 8.4 dB and the maximum output power density was 2.8 W/mm for operation of class A at CW 2 GHz. MESFETs on HPSI substrates showed no current instability and much higher output power density in comparison to MESFETs on vanadium-doped SI substrates.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

763-766

DOI:

10.4028/www.scientific.net/MSF.556-557.763

Citation:

J. H. Yim et al., "4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates", Materials Science Forum, Vols. 556-557, pp. 763-766, 2007

Online since:

September 2007

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Price:

$35.00

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