Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

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We detail a comprehensive approach to preparing epiwafers for bipolar SiC power devices which entails etching the substrate, growing a semi-sacrificial basal plane dislocation (BPD) conversion epilayer, polishing away a portion of that conversion epilayer to recover a smooth surface and then growing the device epilayers following specific methods to prevent the reintroduction of BPDs. With our best processing, we achieve a BPD density of < 10 cm-2 and an extended defect density of < 1.5 cm-2. Specifics of low BPD processing and particular concerns and metrics will be discussed in regard to process optimization and simplification.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

77-80

Citation:

J. J. Sumakeris et al., "Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices ", Materials Science Forum, Vols. 556-557, pp. 77-80, 2007

Online since:

September 2007

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$38.00

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