Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
We detail a comprehensive approach to preparing epiwafers for bipolar SiC power devices which entails etching the substrate, growing a semi-sacrificial basal plane dislocation (BPD) conversion epilayer, polishing away a portion of that conversion epilayer to recover a smooth surface and then growing the device epilayers following specific methods to prevent the reintroduction of BPDs. With our best processing, we achieve a BPD density of < 10 cm-2 and an extended defect density of < 1.5 cm-2. Specifics of low BPD processing and particular concerns and metrics will be discussed in regard to process optimization and simplification.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
J. J. Sumakeris et al., "Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices ", Materials Science Forum, Vols. 556-557, pp. 77-80, 2007