9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on
SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Q. C. J. Zhang et al., "9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on", Materials Science Forum, Vols. 556-557, pp. 771-774, 2007