Paper Title:
9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on
  Abstract

SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
771-774
DOI
10.4028/www.scientific.net/MSF.556-557.771
Citation
Q. C. J. Zhang, C. Jonas, B. Heath, M. K. Das, S. H. Ryu, A. K. Agarwal, J. W. Palmour, "9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on", Materials Science Forum, Vols. 556-557, pp. 771-774, 2007
Online since
September 2007
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Price
$35.00
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