9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

Abstract:

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SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

771-774

DOI:

10.4028/www.scientific.net/MSF.556-557.771

Citation:

Q. C. J. Zhang et al., "9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on", Materials Science Forum, Vols. 556-557, pp. 771-774, 2007

Online since:

September 2007

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Price:

$35.00

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