Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs


Article Preview

In this paper we give a comparative study of two types of gate oxidation of n-channel 6HSiC MOSFETs. One set of transistors was fabricated using pyrogenic oxidation with no postoxidation annealing, and for the second set the oxide was grown in dry O2 with post-oxidation annealing. The lateral MOSFETs show a Hall mobility of ~ 75 cm2/Vs which is essentially same for both types of oxide. From the IV characteristics curves, the latter devices exhibit an average effective channel mobility of 72 (± 5) cm2/Vs, whereas the former has a value of 30 (± 3) cm2/Vs. From the capacitance and conductance measurements, the interface trap density for pyrogenicgrown oxide using is roughly a factor of 2 greater than those grown by dry oxidation. We found that the pyrogenic post-oxidation anneal at 1073K helps to reduce the interface states density and improves the effective channel mobility of 6H-SiC MOSFETs.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




K. K. Lee et al., "Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs", Materials Science Forum, Vols. 556-557, pp. 791-794, 2007

Online since:

September 2007




[1] V. V. Afanas'ev, M. Bassler, G. Pensl: and M. Schulz: Phys. Stat. Sol. (a) Vol. 162 (1997), p.321.

[2] G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev. H. Yano, T. Kimoto, H. Matsunami: Mat. Res. Soc. Symp. Proc. Vol. 640 (2001), H3. 2.

[3] S. M. Sze: Physics of Semiconductor Devices: (Wiley, New York, 1981), 2nd ed.

[4] G. Rutsch, R. P Devaty, W.J. Choyke, D.W. Langer, L.B. Rowland: J. Appl. Phys. Vol. 84 (1998), p. (2062).

[5] E. Arnold: IEEE Trans. Electron. Devices Vol. 46 (1999), p.497.