High Frequency 4H-SiC MOSFETs
We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax=11.2 GHz for a device with 0.5 µm nominal channel length. Functional devices with 0.3 µm nominal channel length were also made. These devices gave fT=15.1 GHz and fmax=19.5 GHz but they have lower breakdown voltages and therefore lower overall performance. The measured devices are double fingered with 0.8 mm total gate width.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
G. Gudjónsson et al., "High Frequency 4H-SiC MOSFETs", Materials Science Forum, Vols. 556-557, pp. 795-798, 2007