High Temperature Characterisation of 4H-SiC VJFET


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4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 % reduction in drain current density. This drop in drain currents is much lower than previously reported values of a 30 % drop in JFETs at high temperatures. The average temperature coefficient of the threshold voltage was found to be -1.36 mV/°C which is smaller than for most Si FETs. We have found that these devices have shown good I-V characteristics upto 377 °C along with being able to retain its characteristics on being retested at room temperature.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




P. Bhatnagar et al., "High Temperature Characterisation of 4H-SiC VJFET", Materials Science Forum, Vols. 556-557, pp. 799-802, 2007

Online since:

September 2007




[1] J.B. Casady, R.W. Johnson: Solid State Electronics, Vol. 39 (1996), p.1409.

[2] D.E. Cusack, W.M. Glasheen and H.R. Steglich: Trans. of 2 nd Int. High Temperature Electronics Conf. (HiTEC), Session III, (1994), p.17.

[3] K.V. Vassilevski, N.G. Wright, I.P. Nikitina, A.B. Horsfall, A.G. O'Neill, M.J. Uren, K.P. Hilton, A.G. Masterton, A.J. Hydes and C.M. Johnson: Semiconductor Science and Technology, Vol. 20 (2005), p.271.

[4] C.M. Zetterling, S.M. Koo, et. al.: Proc. of MRS Vol. 764 (2003), p. C1. 4.

[5] J.N. Merrett, W.A. Draper, et al.: HiTEC '04, (2004), CD-ROM.

[6] S.M. Sze: Physics of Semiconductor Devices (Second Edition, Wiley, New York, 1981), p.330.

[7] J.B. Casady, D.C. Sheridian, et al.: MRS Society Symposium Vol 423 (1996), p.105.

[8] J.M. McGarrity, C.J. Scozzie, et al.: AIP Proc. 12th Symposium Space Nuclear Power and Propulsion (Jan. 1995, Albuquerque, NM) Part 1, (1995), p.33.