High Temperature Characterisation of 4H-SiC VJFET

Abstract:

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4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 % reduction in drain current density. This drop in drain currents is much lower than previously reported values of a 30 % drop in JFETs at high temperatures. The average temperature coefficient of the threshold voltage was found to be -1.36 mV/°C which is smaller than for most Si FETs. We have found that these devices have shown good I-V characteristics upto 377 °C along with being able to retain its characteristics on being retested at room temperature.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

799-802

DOI:

10.4028/www.scientific.net/MSF.556-557.799

Citation:

P. Bhatnagar et al., "High Temperature Characterisation of 4H-SiC VJFET", Materials Science Forum, Vols. 556-557, pp. 799-802, 2007

Online since:

September 2007

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Price:

$35.00

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