High Temperature Characterisation of 4H-SiC VJFET
4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 % reduction in drain current density. This drop in drain currents is much lower than previously reported values of a 30 % drop in JFETs at high temperatures. The average temperature coefficient of the threshold voltage was found to be -1.36 mV/°C which is smaller than for most Si FETs. We have found that these devices have shown good I-V characteristics upto 377 °C along with being able to retain its characteristics on being retested at room temperature.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
P. Bhatnagar et al., "High Temperature Characterisation of 4H-SiC VJFET", Materials Science Forum, Vols. 556-557, pp. 799-802, 2007