Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient


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A vertical hot-wall type reactor, with a unique structure designed for controlling both gas flow behavior and thermal gradient (T/mm) on the susceptor surface, was developed. The simulation results indicate that depending on the height of the epitaxy room (h), the T/mm can be changed from a negative to a positive value. Preliminary epitaxial growth experiments resulted in a maximum growth rate of 51 μm/h, 4-inch area uniformity of σ/mean=1.7% for growth rate and σ/mean=21.5 % for doping concentration, and Z1/2 trap concentration of 9×1012 cm-3 at a growth rate of 43 μm/h.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




M. Ito et al., "Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient", Materials Science Forum, Vols. 556-557, pp. 81-84, 2007

Online since:

September 2007




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[6] CFD Research Corporation http: /www. cfdrc. com/ Fig. 4 (a) Growth rate versus gas flow rate and (b) growth rate versus C/Si rate Fig. 5 The uniformity of the growth rate and doping concentration from the center of the susceptor 0. 6 0. 8 1. 0 1. 2 1. 4.

[20] [30] [40] [50] [30] 40 50 60 70 80.

[10] [20] [30] [40] [50] T: 1825 C P: 40 Torr H2 flow: 75slm h = 105mm Growth rate (µm/h) C/Si (b) (a) T: 1825 C P: 60 Torr C/Si: 1. 0 h = 105mm H2 flow (slm).

[4] [8] [12] [16] [20] [24] [28] 0 10 20 30 40 50 60 70 80 1E16 1E17 1E18 Growth rate (µm/h) Doping Concentration (cm-3 ) Position X (mm).

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