Investigation of Drain Current Saturation in 4H-SiC MOSFETs

Abstract:

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Electronic measurement coupled with device and material modeling of lateral longchannel 4H-SiC MOSFETs is used to investigate current saturation. Observed increases in drain current with increases in temperature are shown to result from a reduction in interface charge trapping. If trapping is ignored, the saturation current is predicted to decrease with increasing temperature as a result of interface phonon scattering.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

811-814

DOI:

10.4028/www.scientific.net/MSF.556-557.811

Citation:

G. Pennington et al., "Investigation of Drain Current Saturation in 4H-SiC MOSFETs", Materials Science Forum, Vols. 556-557, pp. 811-814, 2007

Online since:

September 2007

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Price:

$35.00

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