Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 Specific On-Resistance
SiC MOSFETs are characterized with a specific on-resistance of 8 m⋅cm2 at room temperature and a blocking voltage of 1500 V. Due to the negative shift in the threshold voltage, devices typically show a reduction in on-resistance with temperature. However, this work shows that a positive resistance temperature coefficient can be achieved by proper device design. SiC MOSFETs were characterized for use in high-frequency resonant converters, where an important switching device figure of merit is the product of the device on-resistance and output capacitance (Ron×Coss). For devices with an active area of 3.6×10-3 cm2, the output capacitance is 12.5 pF at a drain bias of 270V. Thus, these device achieve a resonant converter figure of merit Ron×Coss = 28 ⋅pF at room temperature and 34 ⋅pF at 150°C, better than commercial silicon superjunction devices operating at the same temperatures.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
K. Matocha et al., "Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 Specific On-Resistance", Materials Science Forum, Vols. 556-557, pp. 819-822, 2007