Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects

Abstract:

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In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

889-894

DOI:

10.4028/www.scientific.net/MSF.556-557.889

Citation:

W. Bartsch et al., "Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects", Materials Science Forum, Vols. 556-557, pp. 889-894, 2007

Online since:

September 2007

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$35.00

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