Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects
In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the  basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
W. Bartsch et al., "Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects", Materials Science Forum, Vols. 556-557, pp. 889-894, 2007