Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects


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In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




W. Bartsch et al., "Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects", Materials Science Forum, Vols. 556-557, pp. 889-894, 2007

Online since:

September 2007




[1] M.K. Das, J.J. Sumakeris, B.A. Hull, J. Richmond, S. Krishnaswami and A.R. Powell: Mat. Sci. For. Vols. 483-485 (2005) p.965.

[2] B.A. Hull, M.K. Das, J.T. Richmond, J.J. Sumakeris, R. Leonard, J.W. Palmour, and S. Leslie: Proc. 18th Int. Symp. On Power Semiconductor Devices & IC's 2006, Naples, Italy.

[3] D. Peters, R. Elpelt, R. Schoerner, K.O. Dohnke, P. Friedrichs and D. Stephani: Mat. Sci. For. Vols. 483-485 (2005) p.977.

[4] W. Bartsch, R. Elpelt, R. Schoerner, K.O. Dohnke, B. Blöcher, K. Körber: Paper #0889, published at 11 th European Conference on Power Electronics and Applications 2005, Dresden, Germany, ISBN 90-75815-08-5.

[5] K. Nakayama, Y. Sugawara, H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Asano and R. Ishii: Mat. Sci. For. Vols. 483-485 (2005), p.969.

[6] H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleicher and C. Hallin: Mat. Sci. For. Vols. 389-393 (2002), p.1259.

[7] A. Herlet: Solid-State Electronics Vol. 11 (1968) p.717.

[8] E. Spenke: pn-Übergänge, Springer-Verlag Berlin Heidelberg New York, 1979, ISBN 3-54009270-6.

[9] H. J. Benda & E. Spenke: Proc. of the IEEE, Vol. 55 No. 8 (1967).

[10] J. Lutz: Proc. 24th Int. Conf. on Microelectronics Vol. 1 Nis Serbia & Montenegro (2004), p.11.