Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition


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Epitaxial layers have been grown on the (0001) C-face of 2- and 3-inch 4H-SiC wafers. Growth conditions like temperature, pressure, and C/Si ratio have been varied. In both systems smooth surface morphologies could be obtained. The main challenge of epitaxial growth on the Cface of 4H-SiC for electronic device applications seems to be the control of low doping concentration. High temperature and low pressure are the key parameters to reduce the nitrogen incorporation. The hot-wall CVD system used for these experiments allowed the application of higher temperatures and lower pressures than the cold-wall equipment. The lowest doping concentration of 2.5x1015 cm-3 has been achieved by hot-wall epitaxy using a temperature of 1625 °C, a system pressure of 50 hPa, a C/Si ratio of 1.4, and a growth rate of 6.5 2mh-1. Good doping homogeneity on 2-inch and 3-inch wafers could be achieved. For a doping level of ND-NA= 3×1015 cm-3 sigma is about 15%.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




R. A. Stein et al., "Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition ", Materials Science Forum, Vols. 556-557, pp. 89-92, 2007

Online since:

September 2007




[1] H.S. Kong, J.T. Glass and R.F. Davis: J. Appl. Phys. Vol. 64 (1988), p.2672.

[2] T. Kimoto, A. Itoh and H. Matsunami: Phys. Stat. Sol. (b) Vol. 202 (1997), p.247.

[3] D.J. Larkin, P.G. Neudeck, J.A. Powell, L. G. Matus: Appl. Phys. Lett. Vol. 65 (1994), p.1659.

[4] K. Fukuda, W.C. Cho, S. Suzuki, J. Senzaki, T. Tanaka and K. Arai: Appl. Phys. Lett. Vol. 77 (2000), p.866.

[5] K. Fukuda, J. Senzaki, K. Kojima, and T. Suzuki: Materials Science Forum Vol. 433-436 (2003), p.567.

[6] J. J. Sumakeris, M. Das, H. McD. Hobgood, S.G. Müller, M. J. Paisley, S. Ha, M. Skowronski, J.W. Palmour and C.H. Carter, Jr.: Mater. Sci. Forum Vol. 457-460 (2004), p.1113.

DOI: 10.4028/www.scientific.net/msf.457-460.1113

[7] H. Tsuchida, I. Kamata, T. Miyanaga, T. Nakamutra, R. Ishii and Y. Sugawara: Jpn. J. Appl. Phys. Vol. 44 (2005), p. L806.

[8] K. Nakayama, Y. Suguwara, H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, D. Asano and R. Ishii: Mater. Sci. Forum Vol. 483-485 (2005), p.969.

[9] T. Kimoto, A. Itoh, H. Matsunami: Appl. Phys. Lett. Vol. 67 (1995), p.2385.

[10] U. Forsberg, Ö Danielson, A. Henry, M.K. Linnarson and E. Janzén: Mater. Sci. Forum Vol. 389-393 (2002), p.203.

[11] K. Kojima, T. Suzuki, S. Kuroda, J. Nishio K. Arai: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L637.

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