1.2 kV Pin Diodes with SiCrystal Epiwafer

Abstract:

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Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 A.cm-2 and a specific differential series resistance of 4.4 m-⋅cm2. The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

901-904

DOI:

10.4028/www.scientific.net/MSF.556-557.901

Citation:

H. Vang et al., "1.2 kV Pin Diodes with SiCrystal Epiwafer", Materials Science Forum, Vols. 556-557, pp. 901-904, 2007

Online since:

September 2007

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Price:

$35.00

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