Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation


Article Preview

We simulated and measured the forward characteristics of 4H-SiC pin diodes in a wide temperature range from 300K to 700K. Our simulations are based on the stationary drift-diffusion model including a model for incomplete ionization of the dopants. Physically based models for Auger recombination and Shockley-Read-Hall recombination are used as well. For the mobility model the empirical relation of Caughey-Thomas is used. The model parameters to be calibrated in the simulation are the electron and hole minority lifetimes and the electron and hole bulk mobilities. Employing temperature-dependent carrier lifetimes we achieved very good agreement between simulations and measured data. For the temperature- and doping-dependent carrier mobilities we found that the best fit is obtained for a bulk mobility value much smaller than that suggested by standard parameters for 4H-SiC. With the calibrated parameters we simulated the internal carrier distributions for temperatures up to 700 K and for different carrier lifetimes.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




D. Werber et al., "Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation", Materials Science Forum, Vols. 556-557, pp. 905-908, 2007

Online since:

September 2007




[1] W. Bartsch, R. Elpelt, R. Schörner, K. -O. Dohnke, B. Blöcher and K. Körber: Bipolar 6. 5 kV - SiC-Diodes: On the Road to Industrial Application (Proceedings EPE 2005).

DOI: 10.1109/epe.2005.219731

[2] P. Borthen and G. Wachutka: Characterization and simulation of silicon power devices up to very high temperatures (Proceedings MIXDES 2006), p.612.

DOI: 10.1109/mixdes.2006.1706655

[3] G. Wachutka: Microelectronics Journal Vol. 26 (1995), p.307.

[4] W. Shockley and W.T. Read Jr.: Phys. Rev. Vol. 87 (1952) p.835.

[5] R.N. Hall: Phys. Rev. Vol. 87 (1952) p.387.

[6] L. Huldt, N.G. Nilsson and K.G. Svantesson: Appl. Phys. Lett. Vol. 35 (1979) p.776.

[7] W. Lochmann and A. Haug: Solid State Communications Vol. 35 (1980) p.553.

[8] M. Roschke and F. Schwierz: IEEE Trans. Electron Devices Vol. 48 (2001) p.1442.

[9] T.T. Mnatsakanov, M.E. Levinshtein, P. I. Pomortseva and S.N. Yurkov: Semicond. Sci. Technol. Vol. 17 (2002) p.974.

Fetching data from Crossref.
This may take some time to load.