Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS
We fabricate pn-junction diode on p-type 4H-SiC(0001), in which n-type region is formed by N ion implantation at room temperature (total dose: 2.4 x 1015 /cm2, thickness: 300 nm) and subsequently annealed for 5 min using electron bombardment annealing system (EBAS). The root-mean-square (RMS) surface roughness and sheet resistance (Rs) for N ion implanted region, annealed at 1900 oC is estimated to be 0.7 nm and 940 4/sq., respectively. The alloyed Ni ohmic contact to N ion implanted layer, annealed at 1900 oC, shows the contact resistance (Rc) of 8.3 x 10-5 4cm2. The forward drop voltage at 100 A/cm2 and on-resistance of mesa-type pn junction diode is estimated to be 3.1 V and 1.3x10-2 4cm2. The reverse bias leakage current of that is 2.2 x 10-5 A/cm2 at 100 V. It is demonstrated that EBAS is able to apply for the fabrication of pn-junction diode.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
A. Egami et al., "Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS", Materials Science Forum, Vols. 556-557, pp. 929-932, 2007