Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum


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4H-SiC p-i-n diodes were fabricated on epitaxial layers grown by Sublimation Epitaxy in Vacuum (SEV) and were evaluated for microwave power switching applications. Full electrical characterization (C-V, DC I-Vs, reverse recovery characteristics, low and high power microwave testing) has been performed. The results showed that SEV-grown SiC material is suitable for bipolar device fabrication. A doping higher than 1019 cm-3 for the p-type contact layer and lower than 1016 cm-3 for the n-type base layer is necessary to demonstrate microwave p-i-n diodes with similar performance as the ones fabricated on commercially available CVD-grown material.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




N. Camara et al., "Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum", Materials Science Forum, Vols. 556-557, pp. 933-936, 2007

Online since:

September 2007




[1] N.S. Savkina, A.A. Lebedev, A.S. Tregubova, M.P. Scheglov: Mat. Science Forum Vol. 338-342 (2000), p.509.

[2] A.V. Bludov, M.S. Boltovets, K.V. Vassilevski, A.V. Zorenko , K. Zekentes, A.A. Lebedev, V.A. Krivutsa: Mat. Science Forum Vols. 457-460 (2004), p.1089.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.1089

[3] N. Camara, K. Zekentes, L. P. Romanov, A. V. Kirillov, M. S. Boltovets, K. V. Vassilevski and G. Haddad: IEEE El. Dev. Lett. Vol. 27(2) (2006), p.108.

DOI: https://doi.org/10.1109/led.2005.862686

[4] N. Camara, K. Zekentes, E. Bano, A. Thuaire, A. Lebedev: presented in ICSCRM'05, Oct. 2005, Pittsburgh, USA Mat. Science Forum Vols. 527-529 (2006), p.391.

DOI: https://doi.org/10.4028/www.scientific.net/msf.527-529.391

[5] K. Vassilevski, K. Zekentes, G. Constantinidis, A. Strel'chuk: Sol. St. Electron. 44 (2000), p.1173.