Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum


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4H-SiC p-i-n diodes were fabricated on epitaxial layers grown by Sublimation Epitaxy in Vacuum (SEV) and were evaluated for microwave power switching applications. Full electrical characterization (C-V, DC I-Vs, reverse recovery characteristics, low and high power microwave testing) has been performed. The results showed that SEV-grown SiC material is suitable for bipolar device fabrication. A doping higher than 1019 cm-3 for the p-type contact layer and lower than 1016 cm-3 for the n-type base layer is necessary to demonstrate microwave p-i-n diodes with similar performance as the ones fabricated on commercially available CVD-grown material.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




N. Camara et al., "Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum", Materials Science Forum, Vols. 556-557, pp. 933-936, 2007

Online since:

September 2007




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