Fabrication and Test of 3C-SiC Electrostatic Resonators
Silicon Carbide has proven its relevance for various MEMS and sensors devices applications. This paper presents the fabrication and the first test results of 3C-SiC electrostatic resonators actuated by applying a combination of AC and DC voltages. The recipe used for the fabrication has taken the advantage of the starting material, 3C-SiC grown on Si, which allows us to use the Si substrate as sacrificial layer to release the structures. Resonators have been fabricated by a two-step process, combining RIE ICP etching with HF wet etching. Resonators have been successfully electrostatically actuated in air-ambient condition. The resonance frequencies were clearly identified, although capacitive current created by actuation was not detected.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
M. Placidi et al., "Fabrication and Test of 3C-SiC Electrostatic Resonators", Materials Science Forum, Vols. 556-557, pp. 949-952, 2007