Fabrication and Test of 3C-SiC Electrostatic Resonators

Abstract:

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Silicon Carbide has proven its relevance for various MEMS and sensors devices applications. This paper presents the fabrication and the first test results of 3C-SiC electrostatic resonators actuated by applying a combination of AC and DC voltages. The recipe used for the fabrication has taken the advantage of the starting material, 3C-SiC grown on Si, which allows us to use the Si substrate as sacrificial layer to release the structures. Resonators have been fabricated by a two-step process, combining RIE ICP etching with HF wet etching. Resonators have been successfully electrostatically actuated in air-ambient condition. The resonance frequencies were clearly identified, although capacitive current created by actuation was not detected.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

949-952

DOI:

10.4028/www.scientific.net/MSF.556-557.949

Citation:

M. Placidi et al., "Fabrication and Test of 3C-SiC Electrostatic Resonators", Materials Science Forum, Vols. 556-557, pp. 949-952, 2007

Online since:

September 2007

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Price:

$35.00

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