Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

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Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally doped with aluminium in a wide concentration range by varying the flow of aluminium into the reactor. The layers were grown on 4H and 6H SiC substrates on both Si and C face. Low temperature photoluminescence (LTPL) has been used to characterize the layers; 6H-SiC show differences in the structure of the Al bound-exciton (Al-BE) between the two faces, suggesting that the site preference is face dependent. From the LTPL spectra the Al concentration in the layers can be estimated.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

97-100

Citation:

H. Pedersen et al., "Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers ", Materials Science Forum, Vols. 556-557, pp. 97-100, 2007

Online since:

September 2007

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$38.00

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