Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs


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We fabricated a multi-chip module of 4H-SiC reduced surface field (RESURF)-type lateral JFETs. A single chip consists of 4 unit devices of 2.0 mm × 0.5 mm in size, which were isolated electrically from each other. The multi-chip module consists of 8 chips mounted on an AMC substrate. The drain current and the breakdown voltage of the module are over 3 A and 771 V, respectively. The turn-on time and the turn-off time are 36ns and 166ns, respectively. The module resistance is proportional to the absolute temperature to the 1.05th power.



Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall




H. Tamaso et al., "Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs", Materials Science Forum, Vols. 556-557, pp. 983-986, 2007

Online since:

September 2007




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