Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs

Abstract:

Article Preview

We fabricated a multi-chip module of 4H-SiC reduced surface field (RESURF)-type lateral JFETs. A single chip consists of 4 unit devices of 2.0 mm × 0.5 mm in size, which were isolated electrically from each other. The multi-chip module consists of 8 chips mounted on an AMC substrate. The drain current and the breakdown voltage of the module are over 3 A and 771 V, respectively. The turn-on time and the turn-off time are 36ns and 166ns, respectively. The module resistance is proportional to the absolute temperature to the 1.05th power.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

983-986

Citation:

H. Tamaso et al., "Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs", Materials Science Forum, Vols. 556-557, pp. 983-986, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] K. Fujikawa, S. Harada, A. Ito, K. Kimoto and H. Matsunami: Mater. Sci. Forum Vol. 457-460 (2004), p.1189.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.1189

[2] T. Masuda, K. Fujikawa, K. Shibata, H. Tamaso, S. Hatsukawa, H. Tokuda, A. Saegusa, Y. Namikawa and H. Hayashi: Mater. Sci. Forum Vol. 527-529 (2006), p.1203.

DOI: https://doi.org/10.4028/www.scientific.net/msf.527-529.1203

[3] T. Fujihira: Jpn. J. Appl. Phys. Vol. 36, (1997), p.6254.

Fetching data from Crossref.
This may take some time to load.