Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs
We fabricated a multi-chip module of 4H-SiC reduced surface field (RESURF)-type lateral JFETs. A single chip consists of 4 unit devices of 2.0 mm × 0.5 mm in size, which were isolated electrically from each other. The multi-chip module consists of 8 chips mounted on an AMC substrate. The drain current and the breakdown voltage of the module are over 3 A and 771 V, respectively. The turn-on time and the turn-off time are 36ns and 166ns, respectively. The module resistance is proportional to the absolute temperature to the 1.05th power.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
H. Tamaso et al., "Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs", Materials Science Forum, Vols. 556-557, pp. 983-986, 2007