Microwave p-i-n Diodes and Switches Based on 4H-SiC

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4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 &, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. Single 4H-SiC p-i-n diode switches, operating in X-band, exhibited insertion loss 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in pulsed mode of operation. The switching speed of the switches has not exceeded 20 ns.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

999-1002

Citation:

K. Zekentes et al., "Microwave p-i-n Diodes and Switches Based on 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 999-1002, 2007

Online since:

September 2007

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$38.00

[1] A.V., Bludov, M.S. Boltovets, K.V. Vassilevski, A.V. Zorenko, K. Zekentes, V.A. Krivutsa, T. V. Kritskaya, A.A. Lebedev: Techn. Phys. Letters Vol. 30 No 2 pp.123-125, (2004).

DOI: https://doi.org/10.1134/1.1666959

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DOI: https://doi.org/10.1109/led.2005.862686

[3] M.S. Boltovets, V.V. Basanets, A.V. Zorenko, V.A. Krivutsa, N. Camara, V.O. Orechovskij, V.I. Simonchuk and K. Zekentes: presented at the ICSCRM'05, Pittsburgh, PA, Sept. 18-23, (2005).

DOI: https://doi.org/10.4028/www.scientific.net/msf.527-529.1379

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DOI: https://doi.org/10.1109/smicnd.2005.1558702

[5] M.S. Boltovets, V.V. Basanets, N. Camara, V.A. Krivutsa, K. Zekentes: presented at the 5th International Conference on Silicon Carbide and Related Materials (ICSCRM-2005). September 1823, 2005, Pittsburgh, Pennsylvania, USA.