Thermal Behavior of Electron Irradiation Defects in CZ-Si


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Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated silicon would decline under annealed at 750°C, it is considered that the oxygen related defects which present donor state were produced after annealed.



Materials Science Forum (Volumes 561-565)

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Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




H. Y. Cui et al., "Thermal Behavior of Electron Irradiation Defects in CZ-Si", Materials Science Forum, Vols. 561-565, pp. 1113-1116, 2007

Online since:

October 2007




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