Thermal Behavior of Electron Irradiation Defects in CZ-Si


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Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated silicon would decline under annealed at 750°C, it is considered that the oxygen related defects which present donor state were produced after annealed.



Materials Science Forum (Volumes 561-565)

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Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




H. Y. Cui et al., "Thermal Behavior of Electron Irradiation Defects in CZ-Si", Materials Science Forum, Vols. 561-565, pp. 1113-1116, 2007

Online since:

October 2007




[1] Smirnov LS, Novosibirsk, Radiation technology for semiconductors, (1980), P. 292.

[2] K. Takakuraa, H. Ohyamaa, T. Yoshida etal. Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon. Physica, B. 340-342(2003).

[3] Meng Xiangti, Progress in Study of Oxygen-related Defects in Neutro and Electron-irradiated Si. Vol. 29, P. 247.

[4] Cai Lili, Li Yangxian, Chen Guifeng etal. Investigation of irradiation donors in electron irradiated CZ-Si, 2006 8th International Conference on Solid-state and Integrated Circuit Technology Proceedings, 1019-1021, (2006).

DOI: 10.1109/icsict.2006.306648

[5] Li Yangxian, Yang Shuai and Chen GuiFeng, Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon, Acta Physica Sinica, (2005), P. 1785.

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