Thermal Behavior of Electron Irradiation Defects in CZ-Si
Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated silicon would decline under annealed at 750°C, it is considered that the oxygen related defects which present donor state were produced after annealed.
Young Won Chang, Nack J. Kim and Chong Soo Lee
H. Y. Cui et al., "Thermal Behavior of Electron Irradiation Defects in CZ-Si", Materials Science Forum, Vols. 561-565, pp. 1113-1116, 2007