Growth and its Properties of GaMnN Film Based on ECR-PEMOCVD


Article Preview

The DMS GaMnN film with certain concentration of Mn and good crystal qualities has been successfully grown on the substrate of sapphire (α-Al2O3) by ECR-PEMOCVD. The graphs of RHEED presented a clear spot-like lattice and the surface was not very glossy, which showed that the GaMnN film was single crystalline and its growth model was three -dimensional island. XRD analysis showed that the film was hexagonal structure with c -Axis oriented and the crystallinity was very well. The AFM test result showed that the GaMnN films were composed of many submicron grains with the same orientation. SQUID(superconducting quantum interference device) measurement showed an apparent ferromagnetic hysteresis at room temperature, and the Curie temperature of the film was about 400k.



Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




F. W. Qin et al., "Growth and its Properties of GaMnN Film Based on ECR-PEMOCVD", Materials Science Forum, Vols. 561-565, pp. 1193-1196, 2007

Online since:

October 2007




[1] Ohno H, Munekata H, Penney T, et al. Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors. Phys. Rev. Lett. 1992, 68: 2664-2667.


[2] Matsukura F, Ohno H, Shen A, et al. Transport properties and origin of ferromagnetism in (Ga, Mn)As. Phys. Rev. 1998, B57: R2037-R2040.


[3] Dietl T, Ohno H, Matsukura F, et al. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors. Science 2000, 287: 1019-1022.


[4] Wang Jiqing, Chen Pingping, Li Zhifeng, et al. Fabrication and its properties of GaMnN by ion implantation. Science in China(series G). 2003, 33(2): 126-131.

[5] Overberg M E, Abernathy C R, Pearton S J, et al. Indication of ferromagnetism in molecular-beam- epitaxy-derived N-type GaMnN. Appl Phys Lett, 2001, 79(9): 1312-1314.


[6] Thaler G T, Overberg M E, Gila B, et al. Magnetic properties of n-GaMnN thin films. Appl. Phys. Lett. 2002, 80: 3964-3966.


[7] Chen P P, Makino H, Kim J J, et al. MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties. J. Crystal Growth. 2003, 251: 331-336.


[8] Sonoda S, Shimizu S, Sasaki T, et al. Molecular beam epitaxy of wurtzite (Ga, Mn)N films on sapphire(0 0 0 1) showing the ferromagnetic behaviour at room temperature. J. Crystal Growth. 2002, 237-239: 1358-1362.


[9] Yan Fawang, Liang Chuguang. Studies and developments of Ⅲ - Ⅴ diluted magnetic semiconductors. Semiconductor Information. 2001, 38(6): 2-7.

[10] Yoon I T, Kang T W, Kim D J. Magnetic behavior of Mn3GaN precipitates in ferromagnetic Ga1−xMnxN layers. Materials Science and Engineering B 2006, 134: 49-53.