XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films
Thin films of hydrogenated silicon-oxycarbide (a-SiOCx:H) have largely replaced pure silicon oxide films as back end of line (BEOL) processing in Ultra Large Scale Integrate Circuit (ULSI). A single chamber system for hot wire chemical vapor deposition (HWCVD) was employed to deposit different films of a-SiOCx:H with 0.5 < x < 0.8. All films were characterized by infrared spectroscopy and X-ray photoelectron spectroscopy (XPS) to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity (XRR) and Small angle X- ray scattering (SAXS) to determine the porosity and inhomogeneities (clustering) in the films.
Young Won Chang, Nack J. Kim and Chong Soo Lee
B. P. Swain, "XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films", Materials Science Forum, Vols. 561-565, pp. 1247-1250, 2007