XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films

Abstract:

Article Preview

Thin films of hydrogenated silicon-oxycarbide (a-SiOCx:H) have largely replaced pure silicon oxide films as back end of line (BEOL) processing in Ultra Large Scale Integrate Circuit (ULSI). A single chamber system for hot wire chemical vapor deposition (HWCVD) was employed to deposit different films of a-SiOCx:H with 0.5 < x < 0.8. All films were characterized by infrared spectroscopy and X-ray photoelectron spectroscopy (XPS) to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity (XRR) and Small angle X- ray scattering (SAXS) to determine the porosity and inhomogeneities (clustering) in the films.

Info:

Periodical:

Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

1247-1250

Citation:

B. P. Swain, "XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films", Materials Science Forum, Vols. 561-565, pp. 1247-1250, 2007

Online since:

October 2007

Authors:

Export:

Price:

$38.00

[1] J. Bullot and M.P. Schmidt. Phys Status Solidi B, Vol. 143 (1987), p.345.

[2] P.I. Rovira and F. Alvarez. Phys Rev B, Vol. 55 (1997), p.4426.

[3] T. Wu, Y.K. Fang, J.W. Hing and C.Y. Chang. Solid-State Electron, Vol 34 (1991), p.189.

[4] W. Hong, N.F. Shin, T.S. Jen, S.L. Ning and C.Y. Chang. IEEE Electron Dev Lett, Vol-13 (1992), p.375.

[5] D. Gracin, I. Bogdanovic, V. Borjanovic, Z. Pastuovic, M. Jaksic, J.M. Dutta, B. Vlahovic and R.J. Nemanich. Vacuum, Vol. 61 (2001), p.303.

DOI: https://doi.org/10.1016/s0042-207x(01)00134-8

[6] D. Gracin, M. Jaksic, C. Yang, V. Borjanovic and B. Pracek. Appl Surf Sci, Vol. 144-145 (1999), p.188.

[7] .

[43] H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, Phys. Status, Solidi B Vol. 100 (1980), p.43.

DOI: https://doi.org/10.1002/pssb.2221000103

[8] F. Fusimoto, A. Ootsuda, K. Komaki, Y. Iwata, H. Okamoto, Y. Hashimoto, Y. Tawada, K. Nishimura, H. Okamoto, and Y. Hashimoto, Jpn. J. Appl. Phys. Vol. 23 (1984), p.7.

[9] S. Ray, D. Das, and A. K. Burua, Sol. Energy Mater, Vol. 15 (1987), p.43.

[10] .

[28] Y. Tawada, K. K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, J. Appl. Phys., Vol. 53 (1982), p.5273.

[11] S.K. Sinha, E.B. Sirota and S. Garoff. Phys Rev B, Vol. 38 (1988), p.2297.

[12] D. Gracin, M. Ivanda, S. Lugomer, U. V. Desnica and Nikola Radic Appl. Surf. Sci., Vol. 70- 71(1993), p.686.

DOI: https://doi.org/10.1016/0169-4332(93)90602-8

[13] D. Gracin, P. Dubcek , M. Jaksic , S. Bernstorff, Thin Solid Films, Vol. 433 (2003), p.88.

DOI: https://doi.org/10.1016/s0040-6090(03)00286-4

[14] D. Gracin, P. Dubcek, H. Zor c, K. Juraic, Thin Solid Films, Vol. 459 (2004), p.216.

[15] D. Gracin, I. Bogdanovic, V. Borjanovic, M. Jaksic, Z. Pastuovic, J. M. Dutta, B. Vlahovic, R.J. Nemanich, Vacuum, Vol. 61 (2001), p.303.

DOI: https://doi.org/10.1016/s0042-207x(01)00134-8

[16] D. Gracini and P. Dubcek, Fizika A (Zagreb) Vol. 8 (1999), p.131.

[17] A. H. Mahan, D. L. Williamson, B. P. Nelson and R. S. Crandall, Solar Cells, Vol. 27 (1989), p.465.

[18] J. Shinar, R. Shinar, D. L. Williamson, S. Mitra, H. Kavak, V. L. Dalal, Phys. Rev. Vol. 50 (1994), p.7358.

[19] D. L. Williamson, A. H. Mahan, B. P. Nelson, R. S. Crandell, Appl. Phys. Lett., Vol. 21 (1989), p.783.

[20] D. L. Williamson, A. H. Mahan, B. P. Nelson, R. S. Crandell, J. Non-Cryst. Solids, Vol 114 (1989), p-226.