XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films

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Thin films of hydrogenated silicon-oxycarbide (a-SiOCx:H) have largely replaced pure silicon oxide films as back end of line (BEOL) processing in Ultra Large Scale Integrate Circuit (ULSI). A single chamber system for hot wire chemical vapor deposition (HWCVD) was employed to deposit different films of a-SiOCx:H with 0.5 < x < 0.8. All films were characterized by infrared spectroscopy and X-ray photoelectron spectroscopy (XPS) to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity (XRR) and Small angle X- ray scattering (SAXS) to determine the porosity and inhomogeneities (clustering) in the films.

Info:

Periodical:

Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

1247-1250

DOI:

10.4028/www.scientific.net/MSF.561-565.1247

Citation:

B. P. Swain "XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films", Materials Science Forum, Vols. 561-565, pp. 1247-1250, 2007

Online since:

October 2007

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$35.00

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