Structural and Electrical Properties of ZnO Films on Freestanding Thick Diamond Films


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In this paper, ZnO films are deposited on Freestanding Thick Diamond (FTDF) by plasma-assisted Metal Organic Chemical Vapour Deposition (MOCVD). Diethyl zinc, O2, and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction, Hall measurements, and electron probe microanalysis. Experimental results demonstrate that ZnO films deposited at 600°C and 73Pa displays fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.



Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




J. Sun et al., "Structural and Electrical Properties of ZnO Films on Freestanding Thick Diamond Films", Materials Science Forum, Vols. 561-565, pp. 2423-2426, 2007

Online since:

October 2007




[1] Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, J. Appl. Phys. 98 (2005) 041301.

DOI: 10.1063/1.1992666

[2] Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. 83 (2003)4719.

DOI: 10.1063/1.1632537

[3] H. Ohta, H. Mizoguchi, M. Hirano, S. Narushima, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 82 (2003) 823.

[4] X. Y. Kong, Y. Ding, R. Yang, and Z. L. Wang, Science 303 (2004)1348.

[5] U. Rau, M. Schmidt, Thin Solid Films 387 (2001) 141.

[6] D. Persegol, E. Pic, J. Plantier, J. Appl. Phys. 62 (1987) 2563.

[7] J. Sun, Y. Z Bai, T. P. YANG, Y. B. Xu, X.S. Wang, G.T. Du, H. H. Wu, Chin. Phys. Lett. 23 (2006) 1321.

[8] M. B. Assouar, O. Elmazria, R. Jimenez Rioboo, F. Sarry, P. Alnot App. Suf. Sci. 164 (2000) 200.

[9] M. B. Assouar, F. Bénédic, O. Elmazria, M. Belmahi, R. Jiménez, Riobóo, P. Alnot, Diam. Rel. Mater. 10 (2001) 681.

DOI: 10.1016/s0925-9635(00)00493-3

[10] B. Bi, W. S. Huang, J. Asmussen, B. Golding Diam. Rel. Mater. 11 (2002) 677.

[11] J. J. Chen, F. Zeng, D.M. Li, J.B. Niu, F. Pan, Thin Solid Films 485 (2005) 257.

[12] S. H. Seo, W. C. Shin and J. S. Park, Thin Solid Films 416 (2002) 190.

[13] T Lamara, M. Belmahi, O. Elmazria, L. Le Brizoual, J. Bougdira, M. Remy, P. Alnot, Diam. Rel. Mater. 13 (2004) 581.

DOI: 10.1016/j.diamond.2003.10.075

[14] M. E. Hakiki, O. Elmazria, M.B. Assouar, V. Mortet, L. Le Brizoual, M. Vanecek, P. Alnot, Diam. Rel. Mater. 14 (2005) 1175.

DOI: 10.1016/j.diamond.2005.01.002

[15] Z. S. Jin, Z. G. Jiang, Y. Z. Bai, X. Y. Lv, Chin. Phys. Lett. 19 (2002) 1374.

[16] Y. Z. Bai, Z. G. Jiang, C. L. Wang, Z. S. Jin, X. Y. Lv, G. T. Zou, Chin. Phys. Lett. 15 (1998) 228.

[17] C. W. Sun, Z. W. Liu, F. W. Qin, Q. Y. Zhang, K. Liu, S. F. Wu, Acta. Phys. Sin, 55 (2006) 390 (in Chinese).

[18] B. S. Li, Y. C. Liu, Z. S. Chu, D. Z. Shen, Y. M. Lu, J. Y. Zhang, and X. W. Fan J. App. Phys. 91 (2002) 501.

[19] Y. G. Wang, T. S. Jeong, M. S. Ham, J. H. Kim J. Crystal. Growth 94 (2003) 1597.

[20] F G Chen, Z Z Ye, W Z Xu, B H Zhao, L P Zhu, J G Lv, J. Crystal. Growth 281 (2005) 458.

[21] J C Sun, T P Yang, G T Du, H W Liang, J M Bian, L Z Hu, Appl. Surf. Sci. In Press, Corrected Proof.

[22] H. Hirasawa, M. Yoshida, S. Nakamura, Y. Suzuki, S. Okada, K. Kondo, Sol. Energy Mater. Sol. Cells 67 (2001) 231.

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