Structural and Electrical Properties of ZnO Films on Freestanding Thick Diamond Films

Abstract:

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In this paper, ZnO films are deposited on Freestanding Thick Diamond (FTDF) by plasma-assisted Metal Organic Chemical Vapour Deposition (MOCVD). Diethyl zinc, O2, and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction, Hall measurements, and electron probe microanalysis. Experimental results demonstrate that ZnO films deposited at 600°C and 73Pa displays fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.

Info:

Periodical:

Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

2423-2426

DOI:

10.4028/www.scientific.net/MSF.561-565.2423

Citation:

J. Sun et al., "Structural and Electrical Properties of ZnO Films on Freestanding Thick Diamond Films", Materials Science Forum, Vols. 561-565, pp. 2423-2426, 2007

Online since:

October 2007

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Price:

$35.00

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