Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems

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We investigate critical thicknesses of InGaN epilayers grown on GaN substrates with the growth-plane not being the c-plane. In particular, we focus on non-polar orientations with growth planes being the m- and a-planes. We have taken into account the proper hexagonal symmetry of wurtzite GaN. We have found that there is only a small difference in the critical thickness for the cplane and the a-plane material; however, in the case of the m-plane material, we predict a quite different behaviour along the (in-plane) c-axis and the perpendicular (in-plane) a-direction.

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Periodical:

Materials Science Forum (Volumes 567-568)

Edited by:

Pavel Šandera

Pages:

209-212

Citation:

D. Holec and C. J. Humphreys, "Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems", Materials Science Forum, Vols. 567-568, pp. 209-212, 2008

Online since:

December 2007

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DOI: https://doi.org/10.1557/s1092578300001113

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