Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions

Abstract:

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In this work we studied the structural properties of SiGe alloys with different Ge molar compositions co-implanted with manganese and arsenic ions. The ions were implanted at room temperature to fluences of 1×1015, 5×1015 and 1×1016 cm–2 and energies of 170 keV (Mn) and 200 keV (As) in order to achieve the overlap of the implanted profiles. The alloys were studied with Rutherford Backscattering/Channeling spectrometry (RBS/C) and X-ray Diffraction (XRD) techniques. After implantation the implanted region (150 nm) turns into amorphous according with RBS/C. The evolution of the lattice parameter was studied using XRD. The annealing at 550°C induces the recrystallization of the amorphous layer for the sample implanted with the lower fluence and the full recovery is complete after annealing at 700°C. The samples implanted with higher fluences did not reveal any noticeable recovery. The Mn and As profiles do not exhibit significant changes during the annealing at 550oC.

Info:

Periodical:

Materials Science Forum (Volumes 587-588)

Edited by:

António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira

Pages:

298-302

DOI:

10.4028/www.scientific.net/MSF.587-588.298

Citation:

S. Magalhães et al., "Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions", Materials Science Forum, Vols. 587-588, pp. 298-302, 2008

Online since:

June 2008

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$35.00

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