Paper Title
Authors: J.W. Allen, Hermann G. Grimmeiss
Abstract:A brief history of visible light-emitting diodes (LED's) is given, from the first experimental observations of H.J.Round in 1907 to the...
Authors: Bo Monemar
Abstract:This chapter serves as an introduction to the chapters on III-nitrides in this book. It gives a brief review of the development of relevant...
Authors: Vitaly V. Kveder, Martin Kittler
Abstract:There is a growing demand for a silicon-based light emitters generating a light with a wavelength in of 1.3-1.6 μm range, which can be...
Authors: Manfred Reiche
Abstract:The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of...
Authors: N.A. Sobolev
Abstract:Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diodes as well as Ge transistor structures with high electroluminescence (EL) intensities...
Authors: Tu Hoang, Jisk Holleman, Jurriaan Schmitz
Abstract:Silicon-On-Insulator (SOI) technology exhibits significant performance advantages over conventional bulk silicon technology in both...
Authors: L. Rebohle, Wolfgang Skorupa
Abstract:In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light...
Authors: Asif Khan, Krishnan Balakrishnan
Abstract:Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid...
Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Abstract:The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN...
Showing 1 to 10 of 13 Paper Titles