Advances in Light Emitting Materials

Volume 590

doi: 10.4028/

Paper Title Page

Authors: J.W. Allen, Hermann G. Grimmeiss

Abstract: A brief history of visible light-emitting diodes (LED's) is given, from the first experimental observations of H.J.Round in 1907 to the...

Authors: Bo Monemar

Abstract: This chapter serves as an introduction to the chapters on III-nitrides in this book. It gives a brief review of the development of relevant...

Authors: Vitaly V. Kveder, Martin Kittler

Abstract: There is a growing demand for a silicon-based light emitters generating a light with a wavelength in of 1.3-1.6 μm range, which can be...

Authors: Manfred Reiche

Abstract: The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of...

Authors: N.A. Sobolev

Abstract: Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diodes as well as Ge transistor structures with high electroluminescence (EL)...

Authors: Tu Hoang, Jisk Holleman, Jurriaan Schmitz

Abstract: Silicon-On-Insulator (SOI) technology exhibits significant performance advantages over conventional bulk silicon technology in both...

Authors: L. Rebohle, Wolfgang Skorupa

Abstract: In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light...

Authors: Asif Khan, Krishnan Balakrishnan

Abstract: Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid...

Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Abstract: The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN...


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