Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2
This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm x 4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7x10-5 1/K (positive) in the temperature range 20-300°C. In addition, reverse power capabilities of 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at 300°C during rectangular pulsed power operation (tw = 1 ms) have been achieved without device failure.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
R. Ishii et al., "Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2", Materials Science Forum, Vols. 600-603, pp. 1015-1018, 2009