Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
Confocal μ-Raman was used to measure the operating temperatures in SiC MESFETS, AlGaN/GaN/SiC HEMT’s and 4H-SiC PiN diodes. Temperatures obtained from thermal imaging of the MESFETS compared well with those measured from Raman scattering. Operating temperatures were also obtained for large area PiN diode and it was shown that a single point at the center of the device can be used to measure the average temperature.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
O. J. Glembocki et al., "Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices", Materials Science Forum, Vols. 600-603, pp. 1111-1114, 2009