(11-20) Face Channel MOSFET with Low On-Resistance

Abstract:

Article Preview

We have investigated the techniques to improve the channel mobility of SiC MOSFETs and found that the hydrogen termination of dangling bonds at a MOS interface is very effective in improving the channel mobility, particularly that of the interface fabricated on a (11-20) face wafer. A high channel mobility of MOSFET on the (11-20) face was achieved to 244cm2/Vs by new process which can terminate dangling bonds by hydrogen. The vertical MOSFET, which is prepared using this process, has a low on-resistance of 5.7 mΩcm2 and a breakdown voltage of 1100 V. The channel resistance is estimated at 0.58 mΩcm2.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1119-1122

DOI:

10.4028/www.scientific.net/MSF.600-603.1119

Citation:

E. Okuno et al., "(11-20) Face Channel MOSFET with Low On-Resistance", Materials Science Forum, Vols. 600-603, pp. 1119-1122, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.