Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT

Abstract:

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The behavior of stacking faults with regard to Vf degradations and TEDREC phenomena for 4.5 kV SiCGT have been investigated through the use of light emission images. Stacking faults, which cause Vf degradations, are expanded when current densities are increased. A novel phenomena of Vf degradation reduction, TEDREC phenomena, was found, which can reduce degradation by increasing operating temperature. It was observed for the first time that stacking faults become inactive by elevating temperatures to more than 150 oC in spite of existing stacking faults, which is a factor that contributes to TEDREC phenomena.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1175-1178

DOI:

10.4028/www.scientific.net/MSF.600-603.1175

Citation:

K. Nakayama et al., "Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT", Materials Science Forum, Vols. 600-603, pp. 1175-1178, 2009

Online since:

September 2008

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Price:

$35.00

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