A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

Abstract:

Article Preview

For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the 4H-SiC material limit for unipolar devices. Normally-off operation and >10 kV blocking is maintained up to 200oC base plate temperature. The on-state resistance has a slight positive temperature coefficient which makes the n-IGBT attractive for parallel configurations. MOS characterization reveals a low net positive fixed charge density in the oxide and a low interface trap density near the conduction band which produces a 3 V threshold and a peak channel mobility of 18 cm2/Vs in the lateral MOSFET test structure. Finally, encouraging device yields of 64% in the on-state and 27% in the blocking indicate that the 4H-SiC n-IGBT may eventually become a viable power device technology.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1183-1186

DOI:

10.4028/www.scientific.net/MSF.600-603.1183

Citation:

M. K. Das et al., "A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching ", Materials Science Forum, Vols. 600-603, pp. 1183-1186, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.