Paper Title:
12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
  Abstract

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1187-1190
DOI
10.4028/www.scientific.net/MSF.600-603.1187
Citation
Q. J. Zhang, C. Jonas, J. J. Sumakeris, A. K. Agarwal, J. W. Palmour, "12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance", Materials Science Forum, Vols. 600-603, pp. 1187-1190, 2009
Online since
September 2008
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$35.00
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