The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
P+–n–n+-detector structures based on CVD films with an uncompensated donor concentration of 2×1014 cm-3 have been studied. The p+-region was created by implantation of Al ions. Preliminarily, the detectors were irradiated with 8 MeV protons at a fluence of 3×1014 cm-2 and then annealed in a vacuum at 600°C for 1 h and 700°C for 1 h. Nuclear spectrometric techniques with 5.4 MeV a-particles were employed to test the detectors. In measurements performed in the temperature range 20–150°C, the forward- and reverse-bias modes were compared. It is shown that the annealing leads to a higher collection efficiency of carriers generated by nuclear radiation and to a decrease in the amount of charge accumulated by traps in the course of testing. Despite the positive effect of the annealing, there remains a considerable amount of radiation defects, which is manifested, in particular, in the kinetics of the forward current.
Akira Suzuki, Hajime Okumura, Prof. Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Dr. Shin-ichi Nishizawa
A. M. Ivanov et al., "The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity", Materials Science Forum, Vols. 600-603, pp. 1219-1222, 2009