SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

Abstract:

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The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

123-126

DOI:

10.4028/www.scientific.net/MSF.600-603.123

Citation:

F. La Via et al., "SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate", Materials Science Forum, Vols. 600-603, pp. 123-126, 2009

Online since:

September 2008

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Price:

$35.00

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