Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions

Abstract:

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A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

127-130

DOI:

10.4028/www.scientific.net/MSF.600-603.127

Citation:

G. Condorelli et al., "Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions", Materials Science Forum, Vols. 600-603, pp. 127-130, 2009

Online since:

September 2008

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Price:

$35.00

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