Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
G. Condorelli et al., "Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions", Materials Science Forum, Vols. 600-603, pp. 127-130, 2009