Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates

Abstract:

Article Preview

Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the electrical behavior of these structures show the feasibility of this approach.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1277-1280

DOI:

10.4028/www.scientific.net/MSF.600-603.1277

Citation:

Y. Cordier et al., "Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates ", Materials Science Forum, Vols. 600-603, pp. 1277-1280, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.