Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC
A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
M. Camarda et al., "Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC", Materials Science Forum, Vols. 600-603, pp. 135-138, 2009