Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

Abstract:

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A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

135-138

DOI:

10.4028/www.scientific.net/MSF.600-603.135

Citation:

M. Camarda et al., "Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC", Materials Science Forum, Vols. 600-603, pp. 135-138, 2009

Online since:

September 2008

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Price:

$35.00

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