Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates

Abstract:

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We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer properties (orientation, miscut, thickness) on the residual strain of 3C-SiC films grown on silicon substrates. We show that the strain related effects are observed for both studied orientations however some of them (namely the creep effects) were up to now stated only for (100) oriented layers. We also point out the main difference in strain control between the (111) and (100) orientations.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

207-210

DOI:

10.4028/www.scientific.net/MSF.600-603.207

Citation:

M. Zielinski et al., "Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates ", Materials Science Forum, Vols. 600-603, pp. 207-210, 2009

Online since:

September 2008

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$35.00

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