Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
This study refers, through different microscopies, about the carbonization effects on differently oriented Si surfaces. A statistical study on the relationship between some process parameters (such as temperature, process time) and void dimensions and density, for three Si substrate orientations, is reported.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
A. Severino et al., "Void Formation in Differently Oriented Si in the Early Stage of SiC Growth", Materials Science Forum, Vols. 600-603, pp. 215-218, 2009