Void Formation in Differently Oriented Si in the Early Stage of SiC Growth

Abstract:

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This study refers, through different microscopies, about the carbonization effects on differently oriented Si surfaces. A statistical study on the relationship between some process parameters (such as temperature, process time) and void dimensions and density, for three Si substrate orientations, is reported.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

215-218

DOI:

10.4028/www.scientific.net/MSF.600-603.215

Citation:

A. Severino et al., "Void Formation in Differently Oriented Si in the Early Stage of SiC Growth", Materials Science Forum, Vols. 600-603, pp. 215-218, 2009

Online since:

September 2008

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Price:

$35.00

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